Microstructure Characterization for Nano-thick Ir-inserted Nickel Silicides
نویسندگان
چکیده
منابع مشابه
Characterization and Modeling of Stress Evolution during Nickel Silicides Formation
An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to longtime isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental result...
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J. W. Cleary, R. E. Peale,* D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, and W. R. Buchwald Department of Physics, University of Central Florida, Orlando, Florida 32816, USA College of Optics (CREOL), University of Central Florida, Orlando, Florida 32816, USA Sensors Directorate, Air Force Research Laboratory, Hanscom Air Force Base, Massachusetts 01731, USA *Co...
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The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is observed that both diffusion and solubility are higher in δ-Ni2Si than NiSi. The redistribution of B during Ni silicidation is also studied. The SIMS profiles show the presence of concentration step in the middle of the final NiSi layer. This profile shape is explained in light of the results obtain...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2007
ISSN: 1225-0562
DOI: 10.3740/mrsk.2007.17.4.207